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Savantic semiconductor product specification silicon npn power transistors 2sc3150 description with to220c package high breakdown voltage. Discrete semiconductors selection guide 2010 diodes, transistors, esd and signal conditioning devices excellence in portfolio and performance. Performance is based on target specifications, simulated results, andor prototype measurements. Transistors are designed for application in amplifiers with high and super high frequency in switching devices. Low power bipolar transistors bc107 bc108 series page 240412 v1. The operating characteristics of a transistor are all found on its data sheet.
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The product status of the devices described in this data sheet may have changed since this data sheet was published. Transistors 2t326b are silicon, epitaxialplanar, amplifying, with pnp structure. The datasheet archive contains over 100 million electronic component datasheets. This data sheet and its contents the information belong to the members of the premier farnell group of companies the group or are licensed to it. The same operation applies for the pnp transistors as well, but with currents and voltage source polarities reversed.